Method of manufacturing an integrated circuit

摘要

A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure. The gate structure has a length in a first direction and a width in a second direction. The method also comprises forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure. The first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction. Each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.

主权项

1. A method of forming an integrated circuit, the method comprising:
performing a first angle ion implantation on a first side of a gate structure to form a first doped region in a substrate, the gate structure having a length in a first direction and a width in a second direction; and performing a second angle ion implantation on a second side of the gate structure to form a second doped region in the substrate, wherein
the second angle ion implantation is performed separately from the first angle ion implantation to cause the first doped region to be separated from the second doped region,the first angle ion implantation has a first implantation angle with respect to the second direction,the second angle ion implantation has a second implantation angle with respect to the second direction, and each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.