| 发明名称 | Substrate processing method, substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | ||
| 摘要 | There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed. | ||
| 申请公布号 | US9502239(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201514707350 | 申请日期 | 2015.05.08 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC.;AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. | 发明人 | Okuno Masahisa;Kakuda Tooru;Tateno Hideto;Joda Takuya;Kurokawa Masamichi |
| 分类号 | H01L21/20;H01L21/02;H01L21/67;C23C16/448;C23C16/46;C23C16/52 | 主分类号 | H01L21/20 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A substrate processing method, comprising: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate, thereby modifying the film containing the silazane bond; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed. | ||
| 地址 | Tokyo JP | ||