Thin film transistor, method for manufacturing the same, array substrate and display device

摘要

According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.

主权项

1. A manufacturing method of a thin film transistor (TFT), comprising:
forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer; wherein the oxide semiconductor active layer, the etch stop layer and the source/drain electrode are formed by a same mask process; wherein the etch stop layer and the source/drain electrode are made from a same metal material and the etch stop layer is obtained by an oxidation treatment which is performed on the metal material; and wherein forming the oxide semiconductor active layer, the etch stop layer and the source/drain electrode by a same mask process comprises: forming an oxide semiconductor layer on the substrate formed with the gate insulating layer; forming a metal film made of the metal material on the oxide semiconductor layer; applying a photoresist layer on and in contact with the metal film, performing an exposure process by using a half-tone mask or a gray tone mask and performing a developing process to form a photoresist-completely-remained region corresponding to a region of the source/drain electrode, a photoresist-partially-remained region corresponding to a channel region of the TFT and a photoresist-completely-removed region exposing remaining regions on the metal film; removing the metal film and the oxide semiconductor layer in the photoresist-completely-removed region by an etching process to obtain the metal film and the oxide semiconductor active layer which have a same covering area; removing the photoresist layer in the photoresist-partially-remained region by an ashing process to expose a portion of the metal film; performing the oxidation treatment on the exposed portion of the metal film so that the exposed portion of the metal film is completely converted into an oxygen-rich insulating layer for forming the etch stop layer; and removing remaining photoresist layer to obtain the source/drain electrode and the etch stop layer; wherein before performing the oxidation treatment, the metal film corresponding to the channel region is not subjected to an etching process, and a top surface of the etch stop layer and a top surface of the source/drain electrode are in a same horizontal plane.