| 摘要 |
A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing arm" with a semiconductor band of Ga As organized into a Gunn-effect triode and a "reading arm" which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the nth element that is the output terminal of the register. |
