| 发明名称 |
SETT ATT FRAMSTELLA TERNERA OCH KVATERNERA EPITAXIELLA SKIKT |
| 摘要 |
<p>An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quantities of two or more alloying elements in the same oven.</p> |
| 申请公布号 |
SE7900143(A) |
申请公布日期 |
1979.07.17 |
| 申请号 |
SE19790000143 |
申请日期 |
1979.01.08 |
| 申请人 |
* WESTERN ELECTRIC COMPANY INCORPARATED |
发明人 |
J * HOFFMAN MC FEE;B I * MILLER |
| 分类号 |
C30B23/08;C30B23/02;H01L21/203;(IPC1-7):01L21/20 |
主分类号 |
C30B23/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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