Trap rich layer formation techniques for semiconductor devices

摘要

A trap rich layer for an integrated circuit chip is formed by chemical etching and/or laser texturing of a surface of a semiconductor layer. In some embodiments, a trap rich layer is formed by a technique selected from the group of techniques consisting of laser texturing, chemical etch, irradiation, nanocavity formation, porous Si-etch, semi-insulating polysilicon, thermal stress relief and mechanical texturing. Additionally, combinations of two or more of these techniques may be used to form a trap rich layer.

主权项

1. A method comprising:
forming a damaged layer for an integrated circuit by scanning a laser beam in a pattern across a first wafer; forming a circuit layer for the integrated circuit in a second wafer; and bonding the first wafer to a top side of the second wafer; wherein the damaged layer has a trap density of greater than 1011 cm−2 eV−1; and wherein the damaged layer is located between the circuit layer and a substrate of the integrated circuit.