| 摘要 |
<p>PURPOSE:To obtain a GaP red luminous element high in luminescence efficiency even in a single cooling process by liquid-phase-growing a P-type layer using a P- type Ga solution with both doped Zn as an acceptor and O2 used mainly for luminescence. CONSTITUTION:On support board 11 with concavity 12, sliding boards 13 and 15 are mounted which have through holes 14 and 16 and can be moved separatedly, and the entirety is installed in an airtight system. After the device is constituted in this way, P-type GaP substrate 17 including Zn produced by a liquid-capsule lifing method is put in concavity 12 and P-type Ga solution 18 including Zn and Ga2O is produced in through hole 14 making different the positions of concavity 12 and through holes 14 and 16. Then, substrate 17 is made wet with solution 18 with concavity 12 accorded with through hole 14 so as to grown the P-type layer and through hole 16 is made to agree with through hole 14 to open the closing system. Next, the Ar atmosphere at the time is substituted by a H2 atmosphere, S is added to solution 18, and a N-type layer is stacked to obtain a GaP luminous element.</p> |
