发明名称 INSPECTION OF MICROELECTRONIC DEVICES USING NEAR-INFRARED LIGHT
摘要 Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.
申请公布号 US2016363542(A1) 申请公布日期 2016.12.15
申请号 US201615245442 申请日期 2016.08.24
申请人 Intel Corporation 发明人 Zhang Liang W.;Zou Zhihua;Martin, III Osborne A.;Wiedmaier Robert F.
分类号 G01N21/95;G01N21/88;G03F7/20;G01B11/27 主分类号 G01N21/95
代理机构 代理人
主权项 1. A method comprising: illuminating a dielectric material layer on a substrate with a near infrared light beam, wherein the substrate has at least one contact land, the dielectric material layer overlying at least a portion of the contact land, the substrate having at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land; receiving a reflected near infrared light beam from the substrate at a camera; and determining the position of the via relative to the contact land from the reflected light beam using an image processing device.
地址 Santa Clara CA US