| 摘要 |
PURPOSE:To increase the adhesive force by laminating the gold-zinc alloy, the gold-tin alloy and the tin in that order to the P layer side of the III-V group semiconductor chip and then carrying out the heat bonding based on the P layer. CONSTITUTION:The Si-added layer is epitaxial-grown to GaAs to form p-layer 1 and n-layer 2. And Au-Zn alloy 4 and Au-Ge alloy 5 are formed at the layer 1 and layer 2 each. Then Au-Sn eutectic alloy 6 (80wt% of Au, 20wt% of Sn) and Sn 7 are laminated on layer 4. Chip 10 is formed by scribing and then put on basement 11 at the side of the p-layer to be heat-bonded. With this method, it is not required to insert another foil between the chip and the basement or to add vibrations. Thus, the backward characteristics is enhanced, and the using amount of gold is reduced with increased adhesive force. |
