| 摘要 |
<p>PURPOSE:To increase the reliability of connection and the workability at mounting, by decreasing the contact resistance between the semiconductor chip and the package. CONSTITUTION:The epitaxial layer 2 is placed on the n type Si substrate 1. (Fig. a) Next, the oxide film 3 and the opening 4 are formed. (Fig. b) Further, the oxide silicon film 5 is grown and it is diffused in the silicon. (Fig. c) The emitter opening 7 is placed and the n type emitter region 8 is formed by the diffusion from gas phase. (Fig. d) The semiconductor layer 9 is grown at the back of the silicon substrate 1. (Fig. e) The electrodes 10,11,12 are formed by providing opening on the oxide film 5. In this case, the electrodes 10 and 12 are the base electrodes, and the electrode 11 is the emitter electrode. Further, the collector electrde is picked up from the metal layer 13 formed on the semiconductor layer 9 placed at the back of the substrate 1.</p> |
