| 摘要 |
PURPOSE:For increasing elements in density, to make an IC employing the wiring of a high melting point metal such as Mo and W, of a double layer film of the metal employing the bonding pads or wiring of Al or Al-Si, and Al-Si. CONSTITUTION:A first layer wiring including a gate wiring 8 and a second layer wiring including the lead-out wire from source and drain diffusion ranges are made of high melting point metals such as Mo and W. The bonding pad to be deposited on said wiring layers is a two-layer film of Al, Al-Si or the same kind of metal as used for said wiring layers, an Al-Si. Thereby, pierce-through does which occurs frequently when Al wiring is adopted does not occur so that diffusion range is not required to be provided deep, and integration degree is increased. |
