发明名称 |
Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
摘要 |
A nonalloyed ohmic contact (110-112, 120-122) to an n-type Group III(a)-V(a) compound semiconductor body (102-104) is formed by epitaxially growing a Group III(a)-V(a) n++-layer (106-108, 106'-108') doped to at least 1019 cm-3 between the semiconductor body and a metal contact layer (110-112). The metal layer forms an ohmic contact without requiring heating above the eutectic temperature. In order to avoid contamination of the metal-semiconductor interface, a metal contact layer (120-122) may be deposited in situ after MBE growth of the n++-layer. This technique results in both a metal-semiconductor interface with smoother morphology and also an ohmic contact without heating above the eutectic temperature. These procedures are specifically described with reference to the fabrication of GaAs FETs. |
申请公布号 |
US4186410(A) |
申请公布日期 |
1980.01.29 |
申请号 |
US19780919624 |
申请日期 |
1978.06.27 |
申请人 |
BELL TELEPHONE LABORATORIES INC |
发明人 |
CHO, ALFRED Y;DI LORENZO, JAMES V;NIEHAUS, WILLIAM C |
分类号 |
H01L29/43;H01L21/203;H01L21/28;H01L21/285;H01L29/45;H01L29/812;(IPC1-7):H01L29/80;H01L23/48;H01L29/46 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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