| 摘要 |
PURPOSE:To obtain excellent ohmic contact in both electrodes, by each using a crystal containing p type impurities as a substrate and a crystal containing n type impurities as an electrode contact layer. CONSTITUTION:A buffer layer 12 doubling as a p-type InP clad, an In1-XGaX As1-yPy active layer 13 and a n type InP clad layer 14 are successively laminating formed on a p type InP substrate 11, and a n type electrode contact layer 15 is made up on said layers. The contact layer 15 is built up in such a manner that In.Te (0.13%), for example, is used by mixing it in the ratio of lmg to In3g in a liquid phase epitaxial growth liquid consisting of an In.Ga.As.P solution, and the contact layer 15 with approximate 1mum thickness is obtained by the growth of 3 deg.(Six minutes) at 648 deg.C growth starting temperature and 0.5 deg.C/minute cooling velocity. |
