发明名称 |
Method of integrating semiconductor components |
摘要 |
A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisotropic etch. This leaves the devices in mesa form, thinner versions having the facility of lateral terminations, e.g. for the collector. The method is advantageously adapted to provide single type or complementary bipolars with integrated Schottky barrier protection.
|
申请公布号 |
US4199860(A) |
申请公布日期 |
1980.04.29 |
申请号 |
US19770850672 |
申请日期 |
1977.11.11 |
申请人 |
RCA CORP |
发明人 |
BEELITZ, HOWARD R;PRESLAR, DONALD R |
分类号 |
H01L21/762;H01L21/764;H01L27/07;H01L27/082;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|