| 摘要 |
<p>PURPOSE:To prevent the occurrence of loose contact in heat processing by forming a laminated electrode consisting of Cr, Ni, Ag on one semiconductor element and by sealing its upper and lower sides with electrode leads and its surrounding side with a glass tube. CONSTITUTION:Semiconductor element 10 is provided with laminated electrode 8 consisting of Cr, Ni, Ag and bump electrode 3. Semiconductor element 10 is sandwiched by a pair of electrode leads 11 and 12 and its surrounding part is sealed with glass tube 13. By this, Cr in laminated electrode 8 and Si in element 10 are firmly bonded. Even further heat treatment is operated, there is no increase in contact resistance due to the formation of multielement metal, nor any defective contact occurs.</p> |
