| 摘要 |
PURPOSE:To obtain plural color signals using only 1 element, by changing thickness of oxide film covering surface of light-receiving section of each picture element composing a solid image pickup element and causing interference to special wavelength light. CONSTITUTION:Plural p<+>-type buried channel regions 13B, 13G and 13R are diffusionally formed on a p-type Si substrate 5, and n-type regions 11B, 11G and 11R, which are to become the light-receiving surfaces, are provided in such a manner as to become in contact with these regions. And transfer gates 12B, 12G and 12R are formed in such a manner as to be embedded into oxide film located between these regions which are adjoining each other, and then, transfer gates 14B, 14G and 14R are provided in such a manner as to be located in the channel regions while adjoining the transfer gates 12B, 12C and 12R. Electric charges, which were thus generated in the regions 11B-11R, are moved to the channel regions by the transfer gates and transferred parpendicularly to surface of paper by the transfer gates. In this mechanism, by providing the light-receiving surface with holes and applying surface treatment to it several times, oxide films 10B, 10G and 10R, which have respectively different thicknesses, are formed in advance. |
