| 摘要 |
<p>PURPOSE:To transfer or align fine patterns at high precision by controlling the temperature of a mask and an exposed matter independently each other. CONSTITUTION:An Si wafer 2 if controlled for temperature by heating from a support 1 and injection 9 of an N2 gas, a mask 4 is controlled for temperature by a device provided on a support 3 and injections 10, 11 of the N2 gas, thereby preventing independent temperature control systems of the mask 4 and the wafer 2 from exerting an influence each other by an air curtain given by a given temperature of N2 gas flow 8. After alignment of the mask and the wafer, a fine out-of-position between a mask pattern 5 and a pattern on the wafer surface is detected, temperatures of the wafer 2 and the mask 4 are changed independently according to the out- of-position, and then both are realigned accurately according to a very small amount of expansion or contraction. A precision transfer is now obtainable through exposing X ray 6.</p> |
