| 摘要 |
<p>The specification describes a high capacity non-volatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region (34) having a first (36) and second (38) implant or diffusion under a clocked electrode (24) whereby the first implant or diffusion (36) provides a fixed charge required for ROM operation, and the charge and polarity of said second implant or diffusion (38) provides a neutralizing effect on the surface potential under the clocked electrode (24) and above the double implanted or double diffused region (34).</p> |
