| 摘要 |
PURPOSE:To obtain a device which has a high effect of heat radiation, by fitting the opening of a multilayer wiring board on the peripheral surface of the lower end of a radiator which has radiation fins and is hermetically filled with CF4 afterwards and by placing a metal die stage on the wiring board whose obverse side is located on the board and whose reverse side is fixed with a semiconductor unit. CONSTITUTION:An opening provided in the central part of a multilayer wiring board 9 made of ceramic is fitted on the peripheral surface of the lower end of a hollow radiator which has numerous radiation fins on the peripheral part. A circular opening is provided in the center of a chip carrier 2, in which a semiconductor element 1 is housed. A metal die stage 4, which is made of Mo and holds the element 1 on the reverse side of the stage, is fitted on the central part of the chip carrier. The carrier 2 is fixed on the bottom of the wiring board 9 by a brazing material so that the obverse side of the stage 4 is located in the eopning of the hollow radiator 10. The element 1 is connected to the wiring board 9 by wires 3, conductors 5, etc. A lid 6 is fitted on the bottom of the carrier 2. CF4 is hermetically filled in the radiator 10 including a gap 9' around the stage 4. The top 13 of the radiator is welded to seal it up. |
