Cu-low K cleaning and protection compositions

摘要

This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

主权项

1. A post Chemical Mechanical Planarization cleaning composition for semiconductor substrates having patterned copper interconnects thereon consisting of:
Tris(2-hydroxyethyl) methylammonium hydroxide, N,N-dimethylethylenediamine, guanosine, ethyl gallate and a balance of deionized water.