| 摘要 |
PURPOSE:To improve the high frequency characteristics of a semiconductor device by forming stably an air gap having the smallest specific inductive capaicty under the ball-like electrode. CONSTITUTION:A leg 7 having a height of approx. 3mu is provided at three portions on the lower surface of a ball-like silver electrode 6 provided on the Schottky barrier metal 2, and the electrode 6 is floated in the amount of the leg 7 on the oxide protective film 5. Since the electrode 6 has three legs 7 on the periphery, even if pressure is applied from the glass container probe thereto during assembling step in the glass container to the semiconductor device, the latter is not crushed but retains air gap of approx 2mu. |
