| 摘要 |
PURPOSE:To inexpensively obtain electrode structure for a thin film capacitor integrated circuit by forming confronting electrodes of aluminum thin film on a dielectric film anodized on the surface of a thin film electrode provided on an insulating substrate and forming a leading electrodes at the confronting electrodes through the through holes of an insulating protective film. CONSTITUTION:A thermal Ta oxide film 2 is formed on a glazed ceramic substrate 1, and a Ta nitride film 3 is formed thereon as a lower capacitor electrode. The Ta nitride film is patterned, is partly anodized to form a TaO5 film 4. There are provided Ni-Cr film 5 and Al film 12 as the conductive film of confronting electrode A, a hole is perforated at a polyimide insulating film 13 coating the film 12, and leading electrode B made of Cr film 8, Ni film 9 and solder bump 11 is formed. In this manner, since the main conductor of the capacitor confronting electrode is made of aluminum, inexpensive electrode structure can be obtained. Since the hole of the protective insulating film is coated with leading electrode, it can prevent corrosion of aluminum film. |
