Method and system for providing thermally assisted magnetic junctions having a multi-phase operation

摘要

A magnetic junction usable in magnetic devices is described. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer has a magnetic thermal stability coefficient having a plurality of magnetic thermal stability coefficient phases. A first phase magnetic thermal stability coefficient has a first slope below a first temperature. A second phase magnetic thermal stability coefficient has a second slope above the first temperature and below a second temperature greater than the first temperature. The first and second slopes are unequal at the first temperature. The magnetic thermal stability coefficient is zero only above the second temperature. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction.

主权项

1. A magnetic junction for use in a magnetic device comprising:
at least one reference layer; at least one nonmagnetic spacer layer; and a free layer, the at least one nonmagnetic spacer layer being between the free layer and the at least one reference layer, the free layer having a magnetic thermal stability coefficient having a plurality of magnetic thermal stability coefficient phases, a first phase magnetic thermal stability coefficient of the plurality of magnetic thermal stability coefficient phases having a first slope below a first temperature, a second phase magnetic thermal stability coefficient of the plurality of magnetic thermal stability coefficient phases having a second slope above the first temperature and below a second temperature, the second temperature being greater than the first temperature, the magnetic thermal stability coefficient being zero above the second temperature and greater than zero below the second temperature, the first slope and second slope being unequal at the first temperature; wherein the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.