| 摘要 |
<p>PURPOSE:To obtain the memory element less in dispersion and having stable and uniform write-in and erase characteristics, by clamping the voltage on the digit lines at a voltage, through the use of two LGFETs of depletion and enhancement type. CONSTITUTION:The circuit consists of write-in selection IGFETM1, memory elements M2, M3, depletion type IGFETM4 and enhancement type IGFETM5. The drain of FETM1 is connected to the write-in power supply, the gate is to write-in signal VW, and the source is to digit line D respectively, the drains of M2, M3 are to the digit line D, the gates are to selection signals VA, VB and the sources are grounded. M4, M5 constitute the clamp circuit. Thus, write-in is made stably, the write-in and erase characteristics are uniform, and dispersion is less for the entire circuit.</p> |
