| 摘要 |
PURPOSE:To have a high integration suitably performed by removing a diffusion layer section and by reducing the area required. CONSTITUTION:A diffusion layer 16, a direct-contact hole 17, the first and second polycrystalline silicone 18 and 19, a contact hole 20 and an aluminum 21 are provided on a semiconductor substrate. Then the process such as an ion injection and the like is performed on the direct-contact section of a node. Consequently, the diffusion layer can be removed from the node too, the surface area of the jointed section of the memory node is reduced and the area to one memory cell can be reduced. Also, the above device is effective in the maintenance of memory. |
