发明名称 METHOD FOR ELECTRON BEAM LITHOGRAPHY
摘要 PURPOSE:To obtain a highly accurate pattern by irradiating the electron beam to a negative type resist in O2 and eliminating radical. CONSTITUTION:In the case a negative type electron-beam resist is remained in a vacuum after the irradiation of the electron beam, the polymer bridging progresses by the action of long-life radical. Therefore, the size of the described pattern after the remaining of the resist is different from the size before the remaining of the resist. When the electron beam is irradiated in the O2 atmosphere of 10<-5>Torr and more, the bridging action is suppressed and the change in size is reduced to the very small value. Furthermore, the minimum remaining time in the vacuum in consideration of the describing time can be shortened, and the working efficiency can be improved.
申请公布号 JPS5626436(A) 申请公布日期 1981.03.14
申请号 JP19790102231 申请日期 1979.08.13
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 MIZUNO FUMIO;TAKEHANA YOUICHI
分类号 H01L21/027;G03F7/20;(IPC1-7):01L21/30 主分类号 H01L21/027
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