| 摘要 |
A memory stable against variation of an external supply voltage is disclosed. The memory comprises a plurality of memory cells, each of memory cells including an insulated-gate field-effect transistor having a gate coupled to a word line, a source and a drain, one of the source and drain being coupled to a digit line, and an information storage capacitor having a first electrode coupled to the other of the source and drain of the transistor and a second electrode, and means for biasing the second electrode with a stabilized voltage.
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