| 摘要 |
PURPOSE:To obtain a highly precise polyimide pattern by a method wherein a negative-type resist is applied on a substrate to be treated, it is exposed and developed into a desired pattern, on which polyimide or polyamide is applied and then a plasma etching is performed. CONSTITUTION:A negative-type resist such as toriaryl isocyanate or the like, for example, is applied on a substrate to be treated, a preparatory heat treatment is performed, the desired pattern is exposed to an electron bean, it is developed and then a region to be exposed 2E is left. On this region 2E, polyamide or polyamide imide 3 is applied, and after performing a heat treatment, a polyimide pattern which is a reversed pattern of a resist pattern 2E is formed by etching the polyamide 3 with a plasma-etching performed using CF4 gas or the like. Hence, a highly precise pattern without undercuts can be obtained by reduced work processes. |
