| 摘要 |
PURPOSE:To obtain an electrode lead having a higher reliability by preventing the production of a short-circuit and a crack in a semiconductor substrate due to the excess eutectic in a gang connection by means of Au-Sn eutectic. CONSTITUTION:A Cr-Cu film 12 is provided at the terminal position on a semiconductor substrate 11, and an Au projection 13 is formed on the film 12. The end of a Cu lead 15 provided on a polyimide resin film 14 is selectively plated with Sn 16. The length A of the Sn plating 16 is smaller than the length B of the Au projec- tion 13. The lead 15 is aligned with the Au projection 13 so that the Sn plating 16 is within the region of the Au projection 13, and pressed by means of a heated jig. On doing this, an Au-Sn eutectic 17 is formed, however there is no excess eutectic to flow out or down. Thus, a lead connection having a higher reliability is obtained. |
