| 摘要 |
PURPOSE:To weaken maximum fieled strength of substrate surface, by providing in the neighborhood of a channel-forming region of a semiconductor substrate a region whose electric conduction type is opposite to that of the substrate or an oxide region, and also by providing thereon an electrode formed on the substrate through a gate oxide membrane. CONSTITUTION:A P type channel region 24 is dispersedly formed on an N<-> type semiconductor substrate 21 which works as an electrolysis-relaxing region, and an N<+> type source region 22 is provided in the region 24. An N<+> type drain region 23 is dispersedly formed keeping a prescribed distance from the region 22, the entire surface is covered with an oxide membrane 26, a window is provided, and the region 22 is provided with a source electrode 27 and the region 23 is provided with a drain electrode 28. And then, by thinning thickness of the membrane 26 located between the regions 22 and 23, this is used for a gate oxide membrane and a gate electrode 29 is provided on it. At this time, by providing plural pieces of P type regions 30 or oxide regions 31 on the top layer section of the substrate 21 matching the electrode 29 while keeping them toward the region 24, the surface field strength of the substrate 21 is weakened and therefore, pressure resistance of the device is improved. |
