Access signal adjustment circuits and methods for memory cells in a cross-point array

摘要

Systems, integrated circuits, and methods to generate access signals to facilitate memory operations in scaled arrays of memory elements, are described. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements and an access signal generator. The access signal generator can be configured to access a resistive memory element in the cross-point array.

主权项

1. A non-volatile memory device, comprising:
a two-terminal cross-point array comprising a plurality of two-terminal memory elements (ME's); and an access signal generator, operatively coupled with the two-terminal cross-point array, to generate an access signal having a magnitude based at least in part on a position of a selected two-terminal resistive memory element in the two-terminal cross-point array to access the selected two-terminal resistive memory element responsive to the access signal.