发明名称 |
Low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT) |
摘要 |
A low-temperature epitaxial method manufactures backside field stop layer of insulated gate bipolar transistor (IGBT) first provides a first conductive type substrate and fabricates front-side elements and front metal layer on a front side of the IGBT. A second conductive type impurity layer is formed on a back side of the first conductive type substrate by low-temperature epitaxial process and a collector metal layer is formed on bottom face of the first conductive type substrate. |
申请公布号 |
US9520479(B1) |
申请公布日期 |
2016.12.13 |
申请号 |
US201615046294 |
申请日期 |
2016.02.17 |
申请人 |
PFC DEVICE HOLDINGS LIMITED |
发明人 |
Chen Mei-Ling;Chen Kuan-Yu |
分类号 |
H01L21/332;H01L29/66;H01L29/417;H01L21/02 |
主分类号 |
H01L21/332 |
代理机构 |
HDLS IPR SERVICES |
代理人 |
Shih Chun-Ming;HDLS IPR SERVICES |
主权项 |
1. A low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT), the method comprising:
(a) providing a first conductive type substrate and forming front side elements of IGBT and front side metal layer of IGBT on a front side of the first conductive type substrate; (b) forming a plurality of first conductive type impurity layers on a back side of the first conductive type substrate by low-temperature epitaxial process; (c) forming a second conductive type impurity layer on the back side of the first conductive type substrate by low-temperature epitaxial process; and (d) forming a collector metal layer med on a bottom face of the first conductive type substrate, wherein impurity concentrations of the first conductive type impurity layers formed in step (b) are decreased from a backside of the first conductive type substrate. |
地址 |
Hong Kong HK |