SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE

摘要

The invention relates to a wiring system for semiconductor circuits in which a first metallisation pattern is sunk in a layer of oxide which may be sunk if desired and a second metallisation pattern which overlies the first is contacted to the first metallisation pattern and to the-semiconductor regions via contact holes. The invention provides important advantages in that it enables more reliable and flatter metallisations which thus present possibilities for multilayer wiring systems. In addition the invention relates to a method of realising a multilayer wiring in which one mask is saved as compared with prior art methods.