| 摘要 |
PURPOSE:To obtain high luminous efficiency with a simple process by specifying the kind of impurity in a substrate as well as carrier density and composition of the substrate and of an active layer when the luminous semiconductor device is constituted by the p<+> type GaAs substrate, the p type Ga1-xAlxAs active layer and a an n type Ga1-yAlyAs layer. CONSTITUTION:The p type Ga1-xAlxAs active layer 8 and the n type Ga1-y AlyAs layer 9 are laminated and grown on the p type GaAs substrate 7, an electrode 10 is connected to the whole of the back surface of the substrate 7, on the layer 9 is fitted an electrode 11, being positioned on the surface in the central part thereof, and a light 12 is emitted from the active layer 8 through the layer 9. In such a constitution, Zn is used as the impurity of the substrate 7, and when the carrier density of the substrate 7 and of the layer 8 is determined to be p<+> and p, respectively, the relation between them is set to be p<+>>=2.7p, while the composition (x) is selected within the range of 0.3<=x<=0.37. Moreover, the relation of this (x) to (y) of the layer 9 is set to be y>x and thus a grid constant is aligned, whereby defects near the boundary of heterojunction are reduced. |
