| 摘要 |
PURPOSE:To obtain a reticle free from defection by observing and inspecting a reticle before transfer exposure by superposing a desired pattern, formed on a reticle for semiconductor exposure, on another idential pattern free from defection. CONSTITUTION:A reticle to be used actually is set at the prescribed place of a reduction projection and exposure device for porjection. A nondefective mask or nondefective pattern drawn by a plotter, etc., is similarly set to the reduction projection exposure device for projection. While projected image 301 of the nondefective pattern and reticle (alpha) images 301 and 302 are superposed mutually, part 301 which is the overlap between the both and part 302 which is not the overlap are observed and dust is found by a difference in contrast; after the reticle is washed, observation is taken again to form the nondefective reticle. |
