| 摘要 |
PURPOSE:To reduce parasitic capacity and enable high-speed operation by forming source and drain regions and an excelent ohmic contact without increase in the area of an element. CONSTITUTION:On a p type Si substrate 1 are formed n<+> type source and drain regions 2 and 3, a gate electrode 4 and a gate oxidized film 7, an insulation film 9 is laminated on the surface and further a resist film 17 is laminated thereon. And, according to a source-drain contact pattern, openings 200 and 300 are made in the film 17. Next, the insulation film 9 is removed by etching while the film 17 serving as a mask, and at this time, the surface of the substrate 1 or a p<+> region 13 is exposed as parts C and E. Then, a poly-Si layer 18 containing impurity of the same conductive type with those in the regions 2 and 3 is laminated on the whole surface and subjected to a heat-treatment process, whereby the impurity is diffused in the substrate 1 to n type regions 19 and 20. In this way, the layer 18 is to contact with the substrate 1 only through the intermediary of the regions 19 and 20, and thus insulation with p-n juction is obtained and a contact part can be provided without increase in the area of element. |
