发明名称 SEMICONDUCTOR COVERING COMPOUND
摘要 <p>PURPOSE:To make it possible to provide a covering of good characteristics under a required temperature, by forming a covering compound by mixing a prescribed noncrystal PbO-B2O3 type low-melting-point glass powder with other powdery materials at a prescribed weight ratio. CONSTITUTION:A mixed compound, which is composed of 50-80% of noncrystal PbO-B2O3 type low-melting-point glass powder whose refracting point is below 500 deg.C, 10-40% of willemite powder, 1-3% each in weight ratio of zircon powder, quartz powder, corodierite powder and whose total weight ratio other than that of Gauss powder is to become 20-50%, is used for covering a silicon element having a roll joint and also a semiconductor device which is connected to molybdenum or tungsten through an alumnium brazed membrane. It is possible, by using this compound, to provide covering at a temperature below 577 deg.C at which aluminum disperses on a silicon element, and this covering is provided with excellent electrical characteristics and impact-resisting performance, and its thermal expansion efficient is to be below 40-50X(1/10<7>) deg.C.</p>
申请公布号 JPS56116648(A) 申请公布日期 1981.09.12
申请号 JP19800019975 申请日期 1980.02.20
申请人 NIPPON ELECTRIC GLASS CO 发明人 SHIBUYA TAKEHIRO;HATANO KAZUO
分类号 C03C3/072;C03C8/24;H01L21/316;H01L23/10;H01L23/29 主分类号 C03C3/072
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