| 摘要 |
PURPOSE:To inspect characteristics of an Si-sapphire interface with simplicity, by forming an Si membrane of a sapphire substrate and depositig on the other main surface of the substrate an electric change resulting from corona discharge. CONSTITUTION:A p type Si single crystal 2 is provided on a main surface of a sapphire substrate 1, a gate electrode 4 is provided through an SiO2 membrane 3, and a p-n joint 5 is formed by n<+> dispersion. By conducting corona discharge on the reverse side using a corona head 6, a positive electric charge is deposited on the reverse side. When this is processed for 30min at 250 deg.C, movable ion in sapphire moves causing a change to amount of the positive electric charge on sapphire side of the interface between sapphire and Si. At this time, a negative electric charge is induced on the interface of Si. And therefore, by measuring characteristics between the electrode 4 and the n<+>Si layer, it is possible to evaluate the sapphire-Si interfacial characteristics. This method eliminates necessities of electrode and etching process and enables an inspection to be achieved with simplicity. |
