| 摘要 |
PURPOSE:To obtain a predetermined shaped pattern by diagrammatically irradiating lights or electron beams on the surface of a semiconductor material, a dielectric material or a metallic material wherein etching speed is selectively changed. CONSTITUTION:With an amorphous film 2 such as of Si or SiO2, Si3N4 or the like formed on an Si wafer 1 and with laser lights 3, 4 partially irradiated, parts 5, 6 are monocrystallized by Si and become high density by SiO2 or Si3N4 to reduce etching speed to 1/3 or below. The same effect will be obtained by a metal film such as Al. Then, a desired pattern will be obtained by photoetching. In this composition, a pattern will be formed without a resist and pattern accuracy will be improved. |
