| 摘要 |
PURPOSE:To provide a thermally oxidized film without disturbing impurity distribution by eliminating an SiO2 film used for the formation of semiconductor circuit elements wherein an Si substrate is covered with a poly Si at 1,000 deg.C or below to oxidize the poly Si. CONSTITUTION:An SiO2 film is removed after providing a required diffusion layer on an Si substrate by using the SiO2 film. A poly Si film 7 is formed at 1,000 deg.C or below to apply Si3N4 mask 8 and the film 7 is changed to SiO2 7' by selectively oxidizing the poly Si at 1,000 deg.C or below. Al electrodes 9 are installed in the SiO2 7' by removing the mask 8. Then, treatment is done at 600 deg.C or below to apply the electrodes and the poly Si. In this composition, the Si substrate will not be oxidized and only the poly Si in which impurities are not diffused will be oxidized. Therefore, the change in impurity distribution will be prevented. And reliability will be improved as simple and accurate control during manufacturing processes for each characteristic of circuit elements is attained. |
