| 摘要 |
PURPOSE:To measure exactly the effective voltage of an ion beam, by connecting a pressure gauge measuring the pressure of the ion beam and an ammeter measuring an ionic current on an electrode plate which is arranged oppositely to the ion beam. CONSTITUTION:A container 1 housing a target such as a semiconductor wafer or the like is connected to an ion source 3 and a magnetic field 4 through an acceleration chamber 2. Furthermore, near the target of the acceleration chamber 2, an electrode plate 6 is arranged, confronting an ion beam which is accelerated toward the target by an accelerator 5, and a pressure gauge 7 measuring the pressure P of the ion beam and an ammeter 8 measuring an ionic current I are connected to the electrode plate 6. Accordingly, the effective voltage of the ion beam can be obtained very exactly in short time by calculating it with a specific expression using the measured pressure P and current I, and the injection depth of the ion beam can be controlled easily. |
