| 摘要 |
PURPOSE:To form a silicon carbide thin film of high hardness at a low temp. of a substrate by a plasma CVD method by using a gaseous SiH4-CH4-Ar mixture with partial pressure of gaseous methane adjusted to 5-20 to 1 partial pressure of gaseous silane. CONSTITUTION:Substrate 3 is mounted on holder 2 in reactor 1, and reactor 1 is evacuated well with exhaust system 4. After heating substrate 3 to about 300- 400 deg.C with heater 5, Ar is introduced from gas feeder 6, and about 200W high frequency power is applied to electrode 9 from high frequency power source 7 through matching box 8 to clean the surface of substrate 3 at about 1-2 Torr vacuum degree. A gaseous SiH4-CH4-Ar mixture is then introduced into reactor 1 to generate plasma at about 1-2 Torr vacuum degree and about 100W high frequency power, and silicon carbide is deposited on the surface of the substrate 3. |
