A method of reactive sputtering and apparatus for carrying out processes of reactive sputtering.

摘要

In a known method of reactive sputtering wherein inert gas and reactive gas are introduced into a reaction chamber (1) provided with a pair of oppositely arranged electrodes (3,6) on one of which is placed a semiconductor substrate (4) to be treated and a target material (7) on the other electrode. An RF power (11) is applied to the latter electrode (6) to generate plasma which activates the inert gas to eject silicon particles from the target material (7) for reaction with nitrogen radical for forming a film of silcon nitride on the substrate (4). The invention improves the quality of said film as well as its growth rate by activating reactive gas in advance before introducing the same into the reaction chamber (1). A microwave oscillator (18) is used for activating the reactive gas, and the electrode (6) on which the target material (7) is placed comprises a magnetron.