| 摘要 |
PURPOSE:To improve the pressure resistance of an element by a method wherein a four layer film containing a Si oxide film and a nitride film is formed on a Si substrate, each layer is etched in predetermined patterns, ions are injected and the layer is oxidized selectively. CONSTITUTION:The Si oxide film 22, the Si nitride film 23, a CVD-SiO2 film 24 and a poly Si film 25 are laminated on the Si substrate 21, the layer 25 is patterned by using a resist pattern 26, the layer 24 is over-etched using the layer 25 as a mask, ions are injected employing the layer 25 as a mask and channel stopper layers 27 are shaped, the layers 25, 26 are removed, the layer 23 is etched using the layer 24 as a mask, a field oxide film is formed through selective oxidation and source and drain regions 29, etc. are shaped. Accordingly, since the channel stopper regions 27 and the source and drain regions 29 are separated and can be shaped in self- alignment forms, the junction pressure resistance of the element is improved. |
