| 摘要 |
PURPOSE:To perform uniform ion implantation to a sample by a method wherein an ion beam generated from an ion source is made to be deflected in the horizontal direction and in the vertical direction, and the frequency ratio of both deflecting signals are made to change every prescribed time unit. CONSTITUTION:Frequency of the deflecting signal S1 of applied voltage in the X direction is made to change stepwise and successively every prescribed period. Timing of this prescribed time is set in accordance frequency of the Y directional signal S2, and for example, frequency in the X direction is set at 580Hz and frequency in the Y direction is set at any of 10-100Hz. Accordingly when ion implantation is performed, because the frequency ratio of both the signals is changed every prescribed time unit, scanning is performed on the surface of the sample 6 according to loci having respectively different inclination, and ion implantation can be performed uniformly on the surface of the sample. |
