| 摘要 |
PURPOSE:To obtain the optical thyristor having excellent ignition sensitivity and critical off voltage rise ratio by a method wherein the desired layer resistance value is acquired by etching the second base layer under a light receiving section, and the second emitter layer functioning as the light receiving section is laminated and formed on the layer. CONSTITUTION:P type second base layer 2 and first emitter layer 3 are shaped by diffusing impurities to the first N type base layer 1 from two sides. The second base layer 2 of the light receiving section is etched off until necessary layer resistance is obtained. The second N type emitter layer 9 of the light receiving section is formed through epitaxial growth and a selective etching process. A cathode electrode 6 is shaped which short-circuits the second emitter layer 9 and the second base layer 2. The thyristor can be manufactured in uniform characteristics and in excllent yield because the layer resistance of the second base layer exerting effects on the sensitivity of optical ignition and the critical off voltage rise ratio is measured and the emitter layer is grown in an epitaxial shape lest the value should be changed. |
