| 摘要 |
PURPOSE:To excite uniformly reaction gas in a thin film treating device and to enable to form a thin film having favorable quality by a method wherein the circumference of a shower at the reaction gas blasting part and a susceptor to put a sample thereon in a bell jar is surrounded with a conductive shield, and the gas blasting part of a reaction gas introducing tube is made also to have shower structure. CONSTITUTION:The outer circumference of the reaction gas blasting part of the shower 2 and the susceptor 8 to put the sample thereon at the center of the bell jar 6 is surrounded with the shield 13 consisted of a conductive material of Al, etc. The upper part shower 11 is provided at the gas blasting part of the upper part reaction gas introducing tube 1 of the bell jar 6. Therefore reaction gas being poured uniformly from the upper part shower of the reaction gas introducing tube 1 is excited uniformly by application of a high-frequency voltage between the shield 13 and application of a high-frequency voltage of an induction coil 3, and is excited again by passing through shower conducting holes 5 at the lower part. Accordingly insufficient excitation of reaction gas is prevented, and the thin film having uniform thickness and uniform quality and having favorable quality can be formed. |
