| 摘要 |
<p>A semiconductor material comprises amorphous Si containing F (a- Si : F) together with a band gap modifying material (e.g. Ge or Sn). The inclusion of F in the material permits the incorporation of the band gap modifier without degradation of other properties due to creation of dangling bonds. H may also be incorporated in the material. The material may be doped and may be used in Schottky, MIS, PN and PIN type solar cells or in electrophotographic devices.</p> |
