发明名称 SEMICONDUCTOR PRESSURE TRANSDUCER
摘要 PURPOSE:To obtain a small product with a better characteristic by bonding a pressure sensitive silicon diaphragm on a pedestal having a pressure introduction path at the center thereof and a base glass having a pressure introduction path beneath thereof with a low melting point. CONSTITUTION:A pressure-sensitive silicon diaphragm 2 is bonded on a silicon pedestal 3 having a pressure introduction path at the center thereof with a solder glass 1 having a working temperature of 530 deg.C, for example, beforehand. A base glass 1 made of a copal glass is embedded into the center of a metal package leaving a pressure introduction on path. The base glass 11 and the pedestal 3 are soldered together with a solder glass having a working temperature of 460 deg.C, for example. The metal package 5 is of a disc made of a copal metal having a pressure introducing pipe 8 soldered on the bottom thereof. The output of the diaphragm 2 is drawn from lead wires 13 and 15 through a hermetic seal terminal 4. Thus, a small sized transducer can be manufactured with a better creep characteristic.
申请公布号 JPS5760240(A) 申请公布日期 1982.04.12
申请号 JP19800135134 申请日期 1980.09.30
申请人 TOKYO SHIBAURA DENKI KK 发明人 SHIROMIZU SHIYUNJI;KIMIJIMA SUSUMU
分类号 G01L9/04;G01L9/00;H01L29/84 主分类号 G01L9/04
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