| 摘要 |
PURPOSE:To provide a solid state image pickup device which reduces the doner density in a storage region, lowers the reverse bias voltage for depeleting the storage region and eliminates the stored image. CONSTITUTION:The second conductive type storage region 1 for storing a signal charge in response to the incident light is formed on the first conductive type semiconductor substrate, the signal charge is transferred to a vertical CCD register 2 when the transfer gate 3 becomes ON state and a channel is formed. when the gate 3 becomes OFF state, a potential barrier is formed between the resistor 2 and the region 1. The signal charge transferred to the vertical register 2 is transferred to the end, and is moved through the horizontal CCD register 4 to an output device 5. At this time the first conductive type surface layer is formed on the overall surface of the storage region 1, and the storage region is completely depleted. Accordingly, a reverse bias voltage, e.g., lower than 30V is applied between the substrate and the storage region 1. |
